Tie Yang., Liyu Hao ,Rabah Khenata, Xiaotian Wang. Strain Conditions for the lnverse Heusler Type FullyCompensated Spin-Gapless Semiconductor Ti2MnAl: A First-Principles Study. Materials (2018)-西南大学物理科学与技术学院

Tie Yang., Liyu Hao ,Rabah Khenata, Xiaotian Wang. Strain Conditions for the lnverse Heusler Type FullyCompensated Spin-Gapless Semiconductor Ti2MnAl: A First-Principles Study. Materials (2018)

发布时间：2023-04-26 19:53:35

Tie Yang., Liyu Hao ,Rabah Khenata, Xiaotian Wang. Strain Conditions for the lnverse Heusler Type FullyCompensated Spin-Gapless Semiconductor Ti2MnAl: A First-Principles Study. Materials (2018)